Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2006-06-06
2006-06-06
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S387000, C257S301000
Reexamination Certificate
active
07056802
ABSTRACT:
The present invention provides a method for fabricating a trench capacitor with an insulation collar (10; 10a,10b) in a substrate (1), which is electrically connected to the substrate (1) on one side via a buried contact (15a,15b;70), having the steps of: providing a trench (5) in the substrate (1) using a hard mask (2, 3) with a corresponding mask opening; providing a capacitor dielectric (30) in the lower and central trench region, the insulation collar (10) in the central and upper trench region and an electrically conductive filling (20) in the lower and central trench region, the top side of the electrically conductive filling (20) being sunk in the upper trench region with respect to the top side of the substrate (1); providing a silicon nitride liner (40) above the hard mask (2, 3) and in the trench (5); providing a silicon liner (50) above the silicon nitride liner (40); carrying out an oblique implantation (I1), as a result of which a shaded region (50a) of the silicon liner (50) is made selectively removable with respect to the rest of the silicon liner (50) by means of an etching process; selectively removing the shaded region (50a) of the silicon liner (50) by means of the etching process; oxidizing the rest of the silicon liner (50); carrying out a spacer etching at the oxidized rest of the silicon liner (50′); and depositing and etching back a conductive filling (70) in order to form the buried contact.
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Infineon - Technologies AG
Jenkins Wilson Taylor & Hunt, P.A.
Le Thao P.
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