Method of fabricating a compound semiconductor thin-layer...

Details Method of fabricating a compound semiconductor thin-layer... Method of fabricating a compound semiconductor thin-layer...

2006-11-28

2006-11-28

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S095000, C257SE21116

Reexamination Certificate

active

07141449

ABSTRACT:
A method of fabricating a thin-film compound solar cell having an n-type buffer layer formed therein for providing a heterojunction with a p-type compound semiconductor light absorbing layer formed on a back electrode by spreading a powder of a sulfur compound containing n-type doping element over the light absorbing layer surface or applying a coat of a solution of a sulfur compound containing n-type doping element onto the light absorbing layer surface and then fusing the powder or the coat thereon by heat. This process can produce a high-quality n-type buffer layer tightly adhered to a p-type compound semiconductor light absorbing layer to achieve stable characteristic of heterojunction therewith.

REFERENCES:
patent: 4343881 (1982-08-01), Sher et al.
patent: 4611091 (1986-09-01), Choudary et al.
patent: 6974976 (2005-12-01), Hollars
patent: 8-330614 (1996-12-01), None

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