Pattern forming method and method of making microdevice

Details Pattern forming method and method of making microdevice Pattern forming method and method of making microdevice

2006-12-12

2006-12-12

Tugbang, A. Dexter (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S602100, C029S603080, C427S128000, C427S126600, C427S348000, C360S125330, C205S119000, C205S220000

Reexamination Certificate

active

07146712

ABSTRACT:
A metal film made of a metal material (e.g., NiFe, CoFeNi, or FeCo) including an iron atom is formed on a substrate (S101). Subsequently, the metal film formed on the substrate is plasma-processed in an environment including a gas (e.g., an oxygen gas having a tetrafluoromethane or trifluoromethane gas added thereto) containing oxygen and fluorine atoms (S103). Then, a resist material (e.g., a chemically amplified positive resist material) is applied onto the plasma-processed metal film, so as to form a resist film (S105). Thereafter, the resist film is partly removed, so as to expose a part of the surface of metal film in conformity to a desirable pattern, thereby forming a resist frame (S107).

REFERENCES:
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patent: B2 56-36706 (1981-08-01), None
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patent: 11-8235 (1999-01-01), None
Okumura et al., “Effects of ECR Ion Shower Treatment on the Magnetic and Recording Properties of CoCrTaPt Thin Film Media”, IEEE Transactions on Magnetics, vol. 34, No. 4, Jul. 1998, pp. 1615-1617.

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