Method of manufacturing a magnetoresistance effect device

Details Method of manufacturing a magnetoresistance effect device Method of manufacturing a magnetoresistance effect device

2006-11-28

2006-11-28

Kim, Paul D. (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S603130, C029S603160, C029S603170, C216S041000, C216S062000, C216S066000, C216S067000, C257S295000, C324S252000, C360S324100, C360S324110, C360S324120, C365S158000, C365S171000, C365S173000, C428S212000, C428S332000, C428S336000, C428S692100, C428S690000, C428S900000

Reexamination Certificate

active

07140096

ABSTRACT:
A method of manufacturing a magnetoresistance effect device, including: forming a first ferromagnetic body, a nonmagnetic dielectric layer on the first ferromagnetic body, and a second ferromagnetic body on the nonmagnetic dielectric layer; etching part of an external region of a predetermined ferromagnetic tunnel junction region using a first linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region; and etching another part of the external region of the predetermined ferromagnetic tunnel junction region using a second linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region and intersecting with the first linear mask pattern.

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“Fabrication of niobium-lead tunnel junctions using a self aligned masking technique”; Jain, A.; Sauvageau, J.; Schwartz, D.; Springer, K; Lukens, J.; Magnetics, IEEE Transactions on vol. 21, Issue 2; Mar. 1985; pp. 955-958.
U.S. Appl. No. 11/245,353, filed Oct. 7, 2005, Nakayama et al.

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