Magnetoresistance effect device

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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Reexamination Certificate

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07064936

ABSTRACT:
A magnetoresistance effect device having a basic structure wherein a multi-layer film comprising a unit of magnetic layer
on-magnetic layer/magnetic layer/antiferromagnetic layer, or antiferromagnetic layer/magnetic layer
on-magnetic layer/magnetic layer is formed with a protective film on a surface of the magnetoresistance effect device employing one of a metal, oxide material, nitride material, a mixture of oxide and nitride material, a double-layer film of metal/oxide, a double-layer film of metal
itride, or a double-layer film of metal/(mixture of oxide and nitride) of film thickness between 2 nm and 7 nm.

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David A. Thompson et al., “Thin Film Magnetoresistors in Memory, Storage, and Related Applications”, IEEE Transactions on Magnetics, vol. MAG-11, No. 4, Jul. 1975, pp. 1039-1050.

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