Static information storage and retrieval – Floating gate
Reexamination Certificate
2006-10-31
2006-10-31
Elms, Richard (Department: 2824)
Static information storage and retrieval
Floating gate
C365S185180, C365S185260, C365S185330
Reexamination Certificate
active
07130215
ABSTRACT:
A nonvolatile memory cell with a charge trapping structure coupled in series is read, by measuring current that flows between the body region of the nonvolatile memory cell and the contact region of the nonvolatile memory cell. The charge storage state of the charge trapping structure affects the measured current.
REFERENCES:
patent: 4939690 (1990-07-01), Momodomi et al.
patent: 5600593 (1997-02-01), Fong
patent: 5701023 (1997-12-01), Bulucea et al.
patent: 5768192 (1998-06-01), Eitan
patent: 5814853 (1998-09-01), Chen
patent: 5936887 (1999-08-01), Choi et al.
patent: 6122191 (2000-09-01), Hirose et al.
patent: 6144586 (2000-11-01), Van Houdt et al.
patent: 6160286 (2000-12-01), Chi
patent: 6172907 (2001-01-01), Jenne
patent: 6403405 (2002-06-01), Kawanaka et al.
patent: 6493265 (2002-12-01), Satoh et al.
patent: 6643170 (2003-11-01), Huang et al.
patent: 6657894 (2003-12-01), Yeh et al.
patent: 6690601 (2004-02-01), Yeh et al.
patent: 2005/0224878 (2005-10-01), Chang
Elms Richard
Haynes Beffel & Wolfeld LLP
Luu Pho M.
Macronix International Co. Ltd.
Suzue Kenta
LandOfFree
Method and apparatus for operating a non-volatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for operating a non-volatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for operating a non-volatile memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3683606