Nonvolatile semiconductor memory device

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185110, C365S189090

Reexamination Certificate

active

07088620

ABSTRACT:
A plurality of switches composing a voltage changing switch circuit17are supplied with a plurality of types of voltages, and are provided so as to correspond to a plurality of row decoders2, such that each switch can separately select and output any of the plurality of types of voltages to the corresponding row decoder2. Voltage boost circuits7, 8generate a plurality of types of voltages by boosting a power supply voltage. A regulator circuit9steps down at least one of the plurality of types of voltages generated by the voltage boost circuits7, 8to stabilize a voltage value, and outputs the resultant voltage to each switch. Each row decoder2selects a memory cell by using a voltage outputted from the corresponding switch. Thus, it is possible to reduce a time required for a program/program verify operation, while reducing power consumption.

REFERENCES:
patent: 5038327 (1991-08-01), Akaogi
patent: 5333122 (1994-07-01), Ninomiya
patent: 5455789 (1995-10-01), Nakamura et al.
patent: 5513146 (1996-04-01), Atsumi et al.
patent: 6181606 (2001-01-01), Choi et al.
patent: 6483750 (2002-11-01), Dallabora et al.
patent: 6535425 (2003-03-01), Nawaki et al.
patent: 6587375 (2003-07-01), Chung et al.
patent: 6771547 (2004-08-01), Tanzawa et al.
patent: 5-290587 (1993-11-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3682859

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.