Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-10-17
2006-10-17
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S712000, C438S725000, C438S799000, C438S737000, C264S293000, C427S198000
Reexamination Certificate
active
07122482
ABSTRACT:
One embodiment of the present invention is a method for generating patterned features on a substrate that includes: (a) forming a first layer on at least a portion of a surface of the substrate, the first layer comprising at least one layer of a first material, which one layer abuts the surface of the substrate; (b) forming a second layer of a second material on at least a portion of the first layer, which second layer is imprinted with the patterned features; (c) removing at least portions of the second layer to extend the patterned features to the first layer; and (d) removing at least portions of the first layer to extend the patterned features to the substrate; wherein the first layer and the second layer may be exposed to an etching process that undercuts the patterned features, and the first material may be lifted-off.
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Stacey Nicholas E.
Thompson Ecron D.
Watts Michael P. C.
Xu Frank Y.
Brooks Kenneth C.
Carter Michael D.
Molecular Imprints, Inc.
Toledo Fernando L.
University of Texas System
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