Method of plasma etching a substrate

Details Method of plasma etching a substrate Method of plasma etching a substrate

2006-10-17

2006-10-17

Richards, N. Drew (Department: 2815)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C257SE21218

Reexamination Certificate

active

07122480

ABSTRACT:
A method for controlling striations and CD loss in a plasma etching method is disclosed. During the etching process, the substrate of semiconductor material to be etched is exposed first to plasma under a low power strike and subsequently to a conventional high power strike. CD loss has been found to be reduced by about 400 Angstroms and striations formed in the contact holes are reduced.

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