Bipolar transistor and method for producing the same

Details Bipolar transistor and method for producing the same Bipolar transistor and method for producing the same

2006-11-28

2006-11-28

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

C438S318000

Reexamination Certificate

active

07141479

ABSTRACT:
A method for producing a bipolar transistor is described, which comprises providing a layer sequence, which comprises a substrate, a first oxide layer and a SOI layer, generating a collector region in the substrate, generating a second oxide layer on the layer sequence, generating a base region in the first oxide layer, such that the base region is in contact with the SOI layer, generating an emitter region on the base region such that the emitter region is isolated from the SOI layer, and generating a collector contact, a base contact and an emitter contact. The present invention is based on the knowledge that the production of a bipolar transistor can be made significantly less expensive when the above layer sequence is used for its production, and thereby, the base region is generated in the BOX layer while the collector region is formed in the substrate. Thereby, otherwise required production process steps and particularly layer deposition steps, such as for a polysilicon or oxide layer, are saved.

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