Semiconductor image sensor with an insulating barrier layer

Details Semiconductor image sensor with an insulating barrier layer Semiconductor image sensor with an insulating barrier layer

1996-10-15

2000-03-07

Ho, Tuan

Television

Camera, system and detail

Solid-state image sensor

348307, 348243, 2502081, 257292, H04N 5335, H04N 964

Patent

active

060347252

ABSTRACT:
An image sensor comprises switching elements 30 on a substrate 1. An insulating separation layer 9 is disposed over the switching elements so that a photodiode arrangement 20a disposed over the insulating separation layer 9, can overlap the switching elements 30 and occupy a maximum area of the image sensor. A barrier layer 10 is interposed between the insulating separation layer 9 and the photodiode arrangement 20a, which prevents degradation of the photodiode characteristics over time.

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