Light emitting device and manufacturing method thereof

Details Light emitting device and manufacturing method thereof Light emitting device and manufacturing method thereof

2006-02-07

2006-02-07

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S200000, C257S201000, C257S081000

Reexamination Certificate

active

06995400

ABSTRACT:
In a light emitting device, a light emitting element which includes a transparent substrate and a stack of GaN-based compound semiconductor layers formed on the first surface of the transparent substrate is mounted on a lead frame or a printed circuit board so that the transparent substrate is located on the side of the stack of GaN-based compound semiconductor layers opposite to the lead frame or the printed circuit board. The second surface of the transparent substrate opposite to the first surface contains a portion inclined with respect to the first surface. Alternatively, an optical member is arranged in contact with the second surface of the transparent substrate, where a surface of the optical member located on the opposite side to the transparent substrate contains a portion inclined with respect to the first surface of the transparent substrate.

REFERENCES:
patent: 6661167 (2003-12-01), Eliashevich et al.
patent: 6747298 (2004-06-01), Slater et al.
patent: 6-244458 (1994-09-01), None

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