Method of forming a refractory metal silicide

Details Method of forming a refractory metal silicide Method of forming a refractory metal silicide

2006-08-08

2006-08-08

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

C117S002000, C117S089000

Reexamination Certificate

active

07087111

ABSTRACT:
A method of forming a crystalline phase material includes, a) providing a stress inducing material within or operatively adjacent a crystalline material of a first crystalline phase; and b) annealing the crystalline material of the first crystalline phase under conditions effective to transform it to a second crystalline phase. The stress inducing material preferably induces compressive stress within the first crystalline phase during the anneal to the second crystalline phase to lower the required activation energy to produce a more dense second crystalline phase. Example compressive stress inducing layers include SiO2and Si3N4, while example stress inducing materials for providing into layers are Ge, W and Co. Where the compressive stress inducing material is provided on the same side of a wafer over which the crystalline phase material is provided, it is provided to have a thermal coefficient of expansion which is less than the first phase crystalline material. Where the compressive stress inducing material is provided on the opposite side of a wafer over which the crystalline phase material is provided, it is provided to have a thermal coefficient of expansion which is greater than the first phase crystalline material. Example and preferred crystalline phase materials having two phases are refractory metal silicides, such as TiSix.

REFERENCES:
patent: 4337476 (1982-06-01), Fraser et al.
patent: 4378628 (1983-04-01), Levinstein et al.
patent: 4568565 (1986-02-01), Gupta et al.
patent: 4897368 (1990-01-01), Kobushi et al.
patent: 4971655 (1990-11-01), Stefano et al.
patent: 5240739 (1993-08-01), Doan et al.
patent: 5376405 (1994-12-01), Doan et al.
patent: 5470794 (1995-11-01), Anjum et al.
patent: 5593924 (1997-01-01), Apte et al.
patent: 5608266 (1997-03-01), Agnello et al.
patent: 5665646 (1997-09-01), Kitano
patent: 5739573 (1998-04-01), Kawaguchi
patent: 5776822 (1998-07-01), Fujii et al.
patent: 5828131 (1998-10-01), Cabral, Jr. et al.
patent: 5874351 (1999-02-01), Hu et al.
patent: 5997634 (1999-12-01), Sandhu et al.
patent: 6054387 (2000-04-01), Fukuda
patent: 6090708 (2000-07-01), Sandhu et al.
patent: 6376372 (2002-04-01), Paranjpe et al.
patent: 8-139056 (1996-05-01), None
Ilderem, V., et al., “Optimized Deposition Parameters For Low Pressure Chemical Vapor Deposited Titanium Silicide”,Massachusetts Institute of Technology, vol. 135, No. 10, pp. 2590-2596 (Feb. 1988).
Nagabushnam, R.V., et al., “Kinetics And Mechanism Of The C49 to C54 Titanium Disilicide Phase Transformation Formation In Nitrogen Ambient”, 5 Pages (Nov. 1995).
Huang, et al. The Influence of Ge-Implantation on the Electrical Characteristics of the Ultra-Shallow . . . IEEE Electron Device Letters, vol. 17, No. 3, Mar. 1996, pp. 88-90.
Omar, M. Ali, “Elementary Solid State Physics,” © 1975 by addison-Wesley Publishing Company, Inc., pp. 539-542 (6 pages total).
Wolf, et al., “Silicon Processing for the VLSI Era—vol. 1-Process Technology,” © 1986 by Lattice Press, pp. 242,261, 262, 303, & 304 (7 pages total).
Ma et al., “Manipulation of the Ti/Si reaction path by introducing an amorphous Ge interlayer”, 4thinternational conference on Solid-state and Integrated circuit technology Proceedings, 1995, pp. 35-37.

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