Method to reduce the fluorine contamination on the Al/Al-Cu...

Details Method to reduce the fluorine contamination on the Al/Al-Cu... Method to reduce the fluorine contamination on the Al/Al-Cu...

2006-06-27

2006-06-27

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S471000, C438S473000

Reexamination Certificate

active

07067433

ABSTRACT:
A method of reducing fluorine contamination on a integrated circuit wafer surface is achieved. The method comprises placing an integrated circuit wafer on a cathode stage. The integrated circuit wafer comprises a surface contaminated with fluorine. The integrated circuit wafer is plasma treated with a plasma comprising a reducing gas that forms HF from the fluorine and a bombardment gas that removes the fluorine from the surface. The cathode stage is heated to thereby increase the rate of the fluorine removal.

REFERENCES:
patent: 5380401 (1995-01-01), Jones et al.
patent: 5731243 (1998-03-01), Peng et al.
patent: 5755891 (1998-05-01), Lo et al.
patent: 5770098 (1998-06-01), Araki et al.
patent: 5776832 (1998-07-01), Hsieh et al.
patent: 5824234 (1998-10-01), Jou et al.
patent: 5854134 (1998-12-01), Lan et al.
patent: 5942446 (1999-08-01), Chen et al.
patent: 5970376 (1999-10-01), Chen
patent: 6063207 (2000-05-01), Yu et al.
patent: 6136680 (2000-10-01), Lai et al.
patent: 6162733 (2000-12-01), Obeng

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