Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1986-11-10

1988-11-29

Edlow, Martin H.

Fishing, trapping, and vermin destroying

357 30, 357 2, 357 59, 357 58, 437201, 136256, 136258, H01L 2348, H01L 2714, H01L 4500, H01L 2904

Patent

active

047885823

ABSTRACT:
A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interfacial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and right shielding film.

REFERENCES:
patent: 3778684 (1973-12-01), Fischer et al.
patent: 4142195 (1979-02-01), Carlson et al.
patent: 4278704 (1981-07-01), Williams
patent: 4322453 (1982-03-01), Miller
patent: 4554478 (1985-11-01), Shimomoto et al.
Coleman, M. G. et al. "The Pd.sub.2 Si-(Pd)-Ni-Solder Plated Matellization System for Silicon Solar Cells", 13th IEEE Photovoltaic Specialists Conference, Washington, 5-8 Jun. 1978, pp. 597-602.
Han M. K. et al. "Influence of Thin Metal as a Top Electrode on the Characteristics of P-I-Na-Si:H Solar Cells", Journal of Applied Physics, vol. 52, No. 4, Apr. 1981, pp. 3073-3075.

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