Semiconductor device, method of manufacturing the same,...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Reexamination Certificate

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C257S737000, C257S778000, C257SE23068, C257SE23069

Reexamination Certificate

active

07132742

ABSTRACT:
A semiconductor device includes a semiconductor substrate in which an integrated circuit is formed and which includes interconnects and electrodes, the interconnects electrically connected with the semiconductor substrate, and the electrodes being formed on the interconnects; a resin layer formed on the semiconductor substrate; redistribution interconnects electrically connected with the electrodes; a plurality of external terminals which are formed on the redistribution interconnects and supported by the resin layer; and a plurality of dummy terminals supported by the resin layer without being electrically connected with the electrodes.

REFERENCES:
patent: 5814891 (1998-09-01), Hirano
patent: 5889327 (1999-03-01), Washida et al.
patent: 6531785 (2003-03-01), Shimizu et al.
patent: 6677677 (2004-01-01), Kimura et al.
patent: 6696765 (2004-02-01), Kazama et al.
patent: 6713850 (2004-03-01), Yuan et al.
patent: 2003/0168739 (2003-09-01), Huang
U.S. Appl. No. 10/637,615, filed Aug. 11, 2003, Yamaguchi.

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