Semiconductor laser device and semiconductor laser module

Details Semiconductor laser device and semiconductor laser module Semiconductor laser device and semiconductor laser module

2006-02-07

2006-02-07

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046010

Reexamination Certificate

active

06996149

ABSTRACT:
In a semiconductor laser device having a GRIN-SCH-MQW structure, attention is paid to correlation among a lasing wavelength, a refractive index difference between an equivalent refractive index in a region including an active layer and an equivalent refractive index in a region including current blocking layers, and a composition of a barrier layer having a quantum well structure. By finding out an optimum combination of these three parameters, a width of the active layer is made wider than a conventional width, thus preventing occurrence of a kink due to horizontal transverse mode in the active layer.

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