Silicon-based visible and near-infrared optoelectric devices

Details Silicon-based visible and near-infrared optoelectric devices Silicon-based visible and near-infrared optoelectric devices

2006-06-06

2006-06-06

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S461000, C257S464000

Reexamination Certificate

active

07057256

ABSTRACT:
In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

REFERENCES:
patent: 4201450 (1980-05-01), Trapani
patent: 4965784 (1990-10-01), Land et al.
Crouch et al., “Infrared Absorption By Sulfur-Doped Silicon Formed By Femtosecond Laser Irradiation”,Appl. Phys. A, 79, 1635-1641 (2004).
Crouch et al., “Comparison Of Structure And Properties Of Femtosecond And Nanosecond Laser-Structured Silicon”,Appl. Phys. Lett., 84, 1850-1852 (2004).
Shen et al., “Formation Of Regular Arrays Of Silicon Microspikes By Femtosecond Laser Irradiation Through A Mask”,Appl. Phys. Lett., 82, 1715-1717 (2003).
Younkin et al., “Infrared Absorption By Conical Silicon Microstructures Made In A Variety Of Background Gases Using Femtosecond-Laser Pulses”,J. Appl. Phys., 93, 2626-2629 (2003).
Wu et al., “Visible Luminescence From Silicon Surfaces Microstructured In Air”,Appl. Phys. Lett., 81, 1999-2001 (2002).
Wu et al., “Near-Unity Below-Band Gap Absorption By Microstructured Silicon”,Appl. Phys. Lett., 78, 1850-1852 (2001).
Her et al., “Femtosecond Laser-Induced Formation Of Spikes On Silicon”,Appl. Phys. A, 70, 383-385 (2000).
Her et al., “Microstructuring Of Silicon With Femtosecond Laser Pulses”,Appl. Phys. Lett., 73, 1673-1675 (1998).
Carey et al., “High Sensitivity Silicon-Based VIS/NIR Photodetectors”, CLEO 2004 (San Francisco, CA, 2004) 1-2.
Serpengüzel et al., “Temperature Dependence Of Photoluminescence In Non-Crystalline Silicon”, Photonics West (San Jose, CA, 2004) 454-462.
Carey et al., “Femtosecond Laser-Assisted Microstructuring Of Silicon For Novel Detector, Sensing And Display Technologies”, LEOS Oct. 26, 2003 (Tuscon, AR, 2003) 481-482.
Carey et al., “Femtosecond Laser-Assisted Microstructuring Of Silicon For Novel Detector, Sensing And Display Technologies”, LEOS 2002 (Glasgow, Scotland, 2002) 97-98.
Younkin et al., “Infrared Absorption By Conical Silicon Microstructures Made In A Variety Of Background Gases Using Femtosecond-Laser Pulses”, CLEO 2001 (Baltimore, MD, 2001) 556—556.
Carey et al., “Field Emission From Silicon Microstructures Formed By Femtosecond Laser Assisted Etching”, CLEO 2001 (Baltimore, MD, 2001) 555-556.
Carey et al., “Fabrication Of Micrometer-Sized Conical Field Emitters Using Femtosecond Laser-Assisted Etching Of Silicon”, International Vacuum Microelectronics Conference 2001 (Davis, CA, 2001) 75-76.
Her et al., “Novel Conical Microstructures Created In Silicon With Femtosecond Laser Pulses”, CLEO 1998 (San Francisco, CA, 1998) 511-512.
Carey et al., “Femtosecond-Laser-Assisted Microstructuring Of Silicon Surfaces”,Optics and Photonics News, 14, 32-36 (2003).
Younkin, “Surface Studies And Microstructure Fabrication Using Femtosecond Laser Pulses”, Ph.D. Thesis, Harvard University, 2001, 118 pages.
Wu, “Femtosecond Laser-Gas-Solid Interactions”, Ph.D. Thesis, Harvard University, 2000, 135 pages.
Sánchez et al., “Dynamics Of the Hydrodynamical Growth Of Columns On Silicon Exposed to ArF Excimer-Laser Irradiation”,Appl. Phys. A, 66, 83-86 (1998).
Sánchez et al., “Whiskerlike Structure Growth On Silicon Exposed To ArF Excimer Laser Irradiation”,Appl. Phys. Lett., 69 (5), 620-622 (1996).
Pedraza et al., “Surface Nanostructuring Of Silicon”,Appl. Phys. A, 77, 277-284 (2003).
Fowlkes et al., “Surface Microstructuring And Long-Range Ordering Of Silicon Nanoparticles”,Appl. Phys. Lett., 80 (20), 3799-3801 (2002).
Dolgaev et al., “Formation Of Conical Microstructures Upon Laser Evaporation Of Solids”,Appl. Phys. A, 73, 177-181 (2001).
Pedraza et al., “Silicon Microcolumn Arrays Grown By Nanosecond Pulsed-Excimer Laser Irradiation”,Appl. Phys. Lett., 74 (16), 2322-2324 (1999).

Affiliated with

Also associated with

Rating

Silicon-based visible and near-infrared optoelectric devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon-based visible and near-infrared optoelectric devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon-based visible and near-infrared optoelectric devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3662814