Non-volatile memory device

Details Non-volatile memory device Non-volatile memory device

2006-10-17

2006-10-17

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Interconnection arrangements

C365S158000, C365S100000, C365S097000, C365S066000, C365S033000, C365S055000, C365S046000

Reexamination Certificate

active

07123498

ABSTRACT:
MRAM has read word lines WLR and write word line WLW extending in the y direction, write/read bit line BLW/R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC includes sub-cells SC1and SC2. The sub-cell SC1includes magneto resistive elements MTJ1and MTJ2and a selection transistor Tr1, and the sub-cell SC2includes magneto resistive elements MTJ3and MTJ4and a selection transistor Tr2. The magneto resistive elements MTJ1and MTJ2are connected in parallel, and the magneto resistive elements MTJ3and MTJ4are also connected in parallel. Further, the sub-cells SC1and SC2are connected in series between the write/read bit line BLW/R and the ground.

REFERENCES:
patent: 4829476 (1989-05-01), Dupuis et al.
patent: 5289410 (1994-02-01), Katti et al.
patent: 6021065 (2000-02-01), Daughton et al.
patent: 6272041 (2001-08-01), Naji
patent: 6445612 (2002-09-01), Naji
patent: 6473336 (2002-10-01), Nakajima et al.
patent: 6625057 (2003-09-01), Iwata
patent: 6700813 (2004-03-01), Inui
patent: 6711052 (2004-03-01), Subramanian et al.
patent: 6804144 (2004-10-01), Iwata
patent: 6822897 (2004-11-01), Ishikawa
patent: 6826076 (2004-11-01), Asano et al.
patent: 6903964 (2005-06-01), Nahas et al.
patent: 411039858 (1999-02-01), None

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