Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – Deep level dopant
Reexamination Certificate
2006-08-08
2006-08-08
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
Deep level dopant
C257S612000
Reexamination Certificate
active
07087981
ABSTRACT:
The present invention relates to a metal-semiconductor contact comprising a semiconductor layer and comprising a metallization applied to the semiconductor layer, a high dopant concentration being introduced into the semiconductor layer such that a non-reactive metal-semiconductor contact is formed between the metallization and the semiconductor layer. The metallization and/or the semiconductor layer are formed in such a way that only a fraction of the introduced doping concentration is electrically active, and a semiconductor layer doped only with this fraction of the doping concentration only forms a Schottky contact when contact is made with the metallization. Furthermore, the invention relates to a semiconductor component comprising a drain zone, body zones embedded therein and source zones again embedded therein. The semiconductor component has metal-semiconductor contacts in which the contacts made contact only with the source zones but not with the body zones.
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A. Yamamoto et al.: “Annealing Effect on Thermoelectric Properties of Bi implanted Si Thin Film”,20thInternational Conference on Thermoelectrics, 2001, pp. 306-309.
Kapels Holger
Mauder Anton
Schulze Hans-Joachim
Strack Helmut
Tihanyi Jenoe
Grenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Stemer Werner H.
Thomas Toniae M.
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