Semiconductor device having an improved through-hole structure

Details Semiconductor device having an improved through-hole structure Semiconductor device having an improved through-hole structure

1997-11-28

2000-03-07

Arroyo, Teresa M.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257758, 257776, H01L 2348

Patent

active

060344369

ABSTRACT:
A semiconductor device has isolated first layer interconnects, second layer interconnects, third layer interconnects, and through-holes each connecting one of the second layer interconnects and a corresponding one of the third layer interconnects together. The through-holes extend beyond the sides of the second layer interconnects to reach the isolated first layer interconnects and rest thereon. The through-holes are formed by a single etching step using a common glass pattern. The occupied area for the interconnects and the fabrication steps thereof can be reduced.

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