High speed self-pixelating low light level optical system

Details High speed self-pixelating low light level optical system High speed self-pixelating low light level optical system

2006-06-27

2006-06-27

Luu, Thanh X. (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C359S248000, C359S326000

Reexamination Certificate

active

07067793

ABSTRACT:
An optical system includes an InGaAsP photodiode having a bandgap and configured to operate in Gieger mode, a first light source configured to emit an optical signal of a first wavelength less than the bandgap at a first intensity, a second light source configured to emit light of a second wavelength greater than the bandgap at a second intensity, a beam combiner configured to combine the first and second wavelengths to simultaneously irradiate the photodiode with the first and second wavelengths, an electric field applied across the photodiode greater than a breakdown voltage thereof and configured to result in avalanching of electrons in the photodiode when the optical signal from the first light source is incident thereon and resulting in a photorefractive response within the photodiode, and an image capture device in optical communication with and configured to capture modulated light of the second wavelength reflected from the photodiode.

REFERENCES:
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Hunt, J.H.; Holmes, R.B.; McCormick, F.B. Imaging Via Spatial Light Modulation at Photon-Counting Light Levels, Lasers and Electro-Optics, 1996. CLEO '96, p. 519.
J.H. Hunt and R.B. Holmes, Observation of Optical Response of Avalanche Photodiodes at Photon-Counting Light Levels, Journal, May 30, 1994, 3 pgs., Appl. Phys. Lett. 64 (22).
L. Qian, S.D. Benjamin, P.W.E. Smith, B.J. Robinson, and D.A. Thompson, Picosecond carrier lifetime and large optical nonlinearities in InGaAsP grown by He-plasma-assisted molecular beam epitaxy, Jan. 15, 1997, 3 pgs., vol. 22, No. 2, Optics Letter.
Li Qian, S.D. Benjamin, P.W.E. Smith, B.J. Robinson, and D.A. Thompson, Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy, Sep. 15, 1997, 3 pgs., vol. 71, No. 11, Applied Physics Letter.

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