Micro pattern forming method and semiconductor device...

Details Micro pattern forming method and semiconductor device... Micro pattern forming method and semiconductor device...

2006-02-21

2006-02-21

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S723000, C438S725000

Reexamination Certificate

active

07001847

ABSTRACT:
A first antireflection film is formed on the surface of an underlying substrate, the first antireflection film suppressing reflection in an absorption mode. A second antireflection film is formed on the first antireflection film, the second antireflection film suppressing reflection in a countervailing interference mode. A cap film is formed on the second antireflection film. A photosensitive resist film is formed on the cap film. A latent image is formed in the photosensitive resist film by exposing the photosensitive resist film to light having a first wavelength. The exposed resist film is developed. Even if the resist film is ashed and resist is again coated, the initial reflectivity lowering effects can be retained.

REFERENCES:
patent: 5643833 (1997-07-01), Tsukamoto
patent: 6110758 (2000-08-01), Estrera et al.
patent: 6117345 (2000-09-01), Liu et al.
patent: 6251774 (2001-06-01), Harada et al.
patent: 6713234 (2004-03-01), Sandhu et al.
patent: 2000-195791 (2000-07-01), None

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