Etching method and composition for forming etching...

Etching a substrate: processes – Masking of a substrate using material resistant to an etchant

Reexamination Certificate

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Details

C216S047000, C430S005000, C430S313000, C430S327000, C438S780000

Reexamination Certificate

active

07141177

ABSTRACT:
This invention offers a method to improve-etching resistance of etching mask upon etching comprising steps of forming a pattern on a substrate by using photoresist, applying a composition for forming an etching protection layer containing water-soluble or water-dispersible resin, crosslinking agent and water and/or water-soluble organic solvent as a solvent, forming etching protection layer which is insoluble in a developer containing water in the interface between a composition for forming an etching protection layer and a photoresist by heating, removing by a developer unnecessary area excluding etching protection layer made of a composition for forming an etching protection layer, and treating a substrate by etching using photoresist pattern as a mask.

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Official Action (in Chinese and English Translation thereof) from State Intellectual Property Office of P.R. China for Application No. 02817955.2.

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