Monolithically integrated circuit comprising a thin film...

Details Monolithically integrated circuit comprising a thin film... Monolithically integrated circuit comprising a thin film...

2006-10-10

2006-10-10

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S335000, C257S340000, C257S343000, C257S379000, C257S409000, C257SE29009, C257SE29011

Reexamination Certificate

active

07119415

ABSTRACT:
A monolithically integrated circuit comprises a thin film resistor (8) with low resistance and low temperature coefficient; a high frequency lateral power transistor device (9) including gate (17), source (16) and drain (15) regions, and a Faraday shield layer region (22; 22′) above the gate region; and at least a first metallization layer (28) there above for electrical connection of the gate (17), source (16) and drain (15) regions through via holes filled with conductive material (29c–d). The thin film resistor (8) and the Faraday shield layer region (22; 22′) are made in the same conductive layer, which is arranged below the first metallization layer (28).

REFERENCES:
patent: 5252848 (1993-10-01), Adler et al.
patent: 5382826 (1995-01-01), Mojaradi et al.
patent: 6222229 (2001-04-01), Hebert et al.
patent: 6525390 (2003-02-01), Tada et al.
C. Dragon, et al.; “A Silicon MOS Process for Integrated RF Power Amplifiers”; MTT-S; p. 257-260, 1996.
A. Lofti; VLSI Handbook (ed. Chen, pp. 7-9-7/11; CRC Press LLC), 2000.

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