Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-06-13
2006-06-13
Nguyen, Ha Tran (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S637000, C438S687000, C438S754000, C438S756000, C134S001300, C216S106000, C216S107000
Reexamination Certificate
active
07060631
ABSTRACT:
The invention encompasses a semiconductor processing method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising Cl−, NO3−and F−. The invention also includes a semiconductor processing method of forming an opening to a copper-containing substrate. Initially, a mass is formed over the copper-containing substrate. The mass comprises at least one of a silicon nitride and a silicon oxide. An opening is etched through the mass and to the copper-containing substrate. A surface of the copper-containing substrate defines a base of the opening, and is referred to as a base surface. The base surface of the copper-containing substrate is at least partially covered by at least one of a copper oxide, a silicon oxide or a copper fluoride. The base surface is cleaned with a cleaning solution comprising hydrochloric acid, nitric acid and hydrofluoric acid to remove at least some of the at least one of a copper oxide, a silicon oxide or a copper fluoride from over the base surface.
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Micro)n Technology, Inc.
Nguyen Ha Tran
Wells St. John P.S.
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