Method of aligning a semiconductor substrate with a base stage a

Radiant energy – Means to align or position an object relative to a source or...

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H01J 37304

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060343753

ABSTRACT:
There is provided a method of aligning a semiconductor substrate with a base stage on which the semiconductor substrate is placed, in the process of forming a circuit pattern directly onto the semiconductor substrate with electron beams, the method including the steps of (a) scanning across an alignment mark formed on a surface of the semiconductor substrate with electron beams with a scanning angle, defined as an angle between a direction of the electron beams and a reference direction, being varied, (b) calculating a width of the alignment mark along a scanning direction for each of scanning angles, and (c) determining a minimum width among widths calculated in the step (b), and defining a scanning angle associated with the minimum width as an angular gap between the semiconductor substrate and the base stage. In accordance with the above-mentioned method, it is possible to align a semiconductor substrate with an X-Y stage with the less number of movements of the X-Y stage, which ensures a higher efficiency in exposing a semiconductor substrate to electron beams.

REFERENCES:
patent: 4812661 (1989-03-01), Owen
patent: 5864142 (1999-01-01), Muraki et al.

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