Photodetector with hetero-structure using lateral growth

Details Photodetector with hetero-structure using lateral growth Photodetector with hetero-structure using lateral growth

2006-08-22

2006-08-22

Epps, Georgia (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C257S458000

Reexamination Certificate

active

07095006

ABSTRACT:
A structure and method of fabrication for a Si based material p-i-n photodetector is disclosed. The light is absorbed in an undoped layer containing SiGe or Ge in such a manner that the absorption length is not limited by a critical thickness of the SiGe or Ge layer. The result is achieved by growing the SiGe or Ge layer from the walls of a trench in monocrystalline Si using lateral epitaxial. A second, doped material is disposed over the undoped layer for biasing and photocarrier collection in the p-i-n diode.

REFERENCES:
patent: 5994724 (1999-11-01), Morikawa
patent: 6043517 (2000-03-01), Presting
patent: 6451702 (2002-09-01), Yang
patent: 6459107 (2002-10-01), Sugiyama
patent: 2002/0058388 (2002-05-01), Ryum et al.
patent: 2005/0093021 (2005-05-01), Ouyang et al.
“Avalanche Gain in GexSi1−x/Si Infrared Waveguide Detectors” Pearsall et al, IEEE Electron Device Letters, vol. EDL-7, No. 5., pp. 330-332, (1986).

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