Semiconductor device and method of fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond

Reexamination Certificate

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Details

C257S780000, C257S784000, C257S738000, C257S737000, C257S693000, C257SE23021, C257SE23069

Reexamination Certificate

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07148576

ABSTRACT:
A semiconductor device having a structure miniaturizable through simple fabrication steps and a method of fabricating a semiconductor device capable of remarkably improving production efficiency are obtained. The semiconductor device comprises a semiconductor chip including a semiconductor circuit having a prescribed function and an electrode on one main surface, a wire having a first end connected with the electrode and a second end having a connecting terminal connected to an external device and an insulator sealing at least the main surface of the semiconductor chip. The connecting terminal provided on the second end of the wire is a part formed while keeping a state integrated with the remaining part of the wire, and exposed on a bottom surface opposite to the upper surface of the insulator closer to the main surface.

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