Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive
Reexamination Certificate
2006-10-31
2006-10-31
Porta, David (Department: 2884)
Radiant energy
Invisible radiant energy responsive electric signalling
Infrared responsive
C438S065000
Reexamination Certificate
active
07129488
ABSTRACT:
A SiGe surface-normal optical path photodetector structure and a method for forming the SiGe optical path normal structure are provided. The method comprises: forming a Si substrate with a surface; forming a Si feature, normal with respect to the Si substrate surface, such as a via, trench, or pillar; depositing SiGe overlying the Si normal feature to a thickness in the range of 5 to 1000 nanometers (nm); and, forming a SiGe optical path normal structure having an optical path length in the range of 0.1 to 10 microns. Typically, the SiGe has a Ge concentration in the range from 5 to 100%. The Ge concentration may be graded to increase with respect to the deposition thickness. For example, the SiGe may have a 20% concentration of Ge at the Si substrate interface, a 30% concentration of Ge at a SiGe film top surface, and a thickness of 400 nm.
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Hsu Sheng Teng
Lee Jong Jan
Maa Jer-Shen
Tweet Douglas J.
Law Office of Gerald Maliszewski
Lee Shun
Maliszewski Gerald
Porta David
Sharp Laboratories of America Inc.
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