Method for evaluating dependence of properties of...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S248000, C438S706000, C438S719000

Reexamination Certificate

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07141506

ABSTRACT:
A method for evaluating a plane orientation dependence of a semiconductor substrate comprises: forming a hard mask on a semiconductor substrate having plane orientation (100); anisotropically etching the semiconductor substrate with use of the hard mask as a mask to obtain a surface oriented in a specific crystal orientation; and evaluating a plane orientation dependence of the semiconductor substrate by use of at least a portion of the surface oriented in a specific crystal orientation.

REFERENCES:
patent: 4309813 (1982-01-01), Hull
patent: 4470875 (1984-09-01), Poteat
patent: 5929477 (1999-07-01), McAllister Burns, Jr. et al.
patent: 6107670 (2000-08-01), Masuda
patent: 6114767 (2000-09-01), Nagai et al.
patent: 6150670 (2000-11-01), Faltermeier et al.
patent: 6165840 (2000-12-01), Choi et al.
patent: 6218262 (2001-04-01), Kuroi et al.
patent: 6335247 (2002-01-01), Tews et al.
patent: 6387757 (2002-05-01), Chu et al.
patent: 6403427 (2002-06-01), Blanchard
patent: 6426254 (2002-07-01), Kudelka et al.
patent: 6433382 (2002-08-01), Orlowski et al.
patent: 6483136 (2002-11-01), Yoshida et al.
patent: 6501125 (2002-12-01), Kobayashi
patent: 6593231 (2003-07-01), Endoh et al.
patent: 2002/0036308 (2002-03-01), Endoh et al.
patent: 2002/0154556 (2002-10-01), Endoh et al.
patent: 2002/0195668 (2002-12-01), Endoh et al.
patent: 01-287470 (1989-11-01), None
patent: 0 618 615 (1994-10-01), None
patent: 7-283117 (1995-10-01), None
patent: 08-130230 (1996-05-01), None
patent: 08-167586 (1996-06-01), None
patent: 10-154810 (1998-06-01), None
patent: 2001-093836 (2001-04-01), None
XP-002337036 “Thermal Oxidation of Single Crystal Silicon”, pp. 211-213, no dates.
XP-001028555 “Precise Mask Alignment to the Crystallographic Orientation of Silicon Wafers Using Wet Anisotropic Etching”, Vangbo et al., 1996 IOP Publishing Ltd, pp. 279-284.
“Alignment of Mask Patterns to Crystal Orientation”, Ensell, 1996 Elsevier Science S.A., pp. 345-348.
XP-001030488 “Precise Mask Alignment Design to Crystal Orientation (100) Silicon”, Chen et al., Proceedings of SPIE vol. 4174, pp. 462-466, 2000.

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