Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-10-24
2006-10-24
Norton, Nadine (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S257000, C438S692000, C438S723000, C438S724000, C216S013000
Reexamination Certificate
active
07125807
ABSTRACT:
A semiconductor substrate has active areas bounded by portions of an insulating layer. A thin layer of tunnel oxide is formed on the substrate and a first layer of conductive material is then deposited. Non-volatile memory cells are manufactured thereon by defining floating gate regions. The definition of these floating gate regions involves defining the first layer of conductive material in order to form a plurality of alternated stripes above pairs of active areas alternated by active areas lacking stripes. Spacers are then formed in the shelter of the side walls of the alternated stripes. A second layer of conductive material is then deposited together with the first layer of conductive material. The spacers are then selectively removed.
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Baldi Livio
Clementi Cesare
Pavan Alessia
Chen Eric B.
Jenkens & Gilchrist P.C.
Norton Nadine
STMicroelectronics S.r.l.
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