Method of forming capacitors and related integrated circuitry

Details Method of forming capacitors and related integrated circuitry Method of forming capacitors and related integrated circuitry

1997-06-13

2000-04-04

Fahmy, Wael

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

H01L 2120

Patent

active

060460938

ABSTRACT:
Capacitor constructions and methods of forming the same are described. In one implementation, a capacitor container is formed over a substrate and includes an internal surface and an external surface. At least some of the external surface is provided to be rougher than at least some of the internal container surface. A capacitor dielectric layer and an outer capacitor plate layer are formed over at least portions of the internal and the external surfaces of the capacitor container. In another implementation, a layer comprising roughened polysilicon is formed over at least some of the external container surface but not over any of the internal container surface. In a preferred aspect, the roughened external surface or roughened polysilicon comprises hemispherical grain polysilicon.

REFERENCES:
patent: 5389568 (1995-02-01), Yun
patent: 5418180 (1995-05-01), Brown
patent: 5447878 (1995-09-01), Park et al.
patent: 5554557 (1996-09-01), Koh
patent: 5792689 (1998-08-01), Yang et al.

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