Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1994-04-12
1995-05-30
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257306, 257412, 257752, H01L 2968
Patent
active
054204623
ABSTRACT:
An element separating oxide film is formed on a P-type semiconductor substrate by means of a selective oxidation method, and then a gate oxide film is formed on the element separating oxide film by a thermal oxidation method. A gate electrode film made of an N-type polysilicon material is formed so as to extend along a step portion of the element separating oxide film on the semiconductor substrate. The upper surface of the gate electrode film is flattened by means of a surface polishing method. Then, isotropic etching is performed by using a resist pattern as a mask, thereby forming a gate electrode. Since in the method the upper surface of the gate electrode film in the flattened, the semiconductor substrate is prevented from being subject to over-etching when a gage electrode is formed, so that the changes of characteristics of MOS transistors are prevented whose gate insulative films have been becoming thinner as their elements have been finer.
REFERENCES:
patent: 4879257 (1989-11-01), Patrick
patent: 5200635 (1993-04-01), Kaga et al.
patent: 5218219 (1993-06-01), Ajika et al.
patent: 5256892 (1993-10-01), Yoshida
Kabushiki Kaisha Toshiba
Limanek Robert P.
LandOfFree
Semiconductor device with conductors on stepped substrate having does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with conductors on stepped substrate having, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with conductors on stepped substrate having will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-364536