Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-10-24
2006-10-24
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S659000, C438S396000
Reexamination Certificate
active
07126206
ABSTRACT:
A capacitor structure in an integrated circuit includes a capacitor region defined within the boundaries thereof with an active circuit layer formed on the surface of the semiconductor substrate. A planarization layer is disposed over the active circuit layer and electrically isolated therefrom in at least the capacitor region. A metal capacitor layer is formed over the planarization layer within the capacitor region and having the bottom plates of a plurality of capacitors defined therein. A layer of dielectric is formed on the bottom plates of the plurality of capacitors of a predetermined thickness. A top plate is formed on the dielectric for each of the plurality of capacitors to define each of the plurality of capacitors, such that a portion of each of the bottom plates extends outside of the boundaries of the associated top plate.
REFERENCES:
patent: 6268779 (2001-07-01), van Zeijl
Howison & Arnott , L.L.P.
Prenty Mark V.
Silicon Labs CP Inc.
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