Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2006-11-14
2006-11-14
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S012000, C257S019000, C257S198000, C257S616000
Reexamination Certificate
active
07135721
ABSTRACT:
The bipolar transistor of the present invention includes a Si collector buried layer, a first base region made of a SiGeC layer having a high C content, a second base region made of a SiGeC layer having a low C content or a SiGe layer, and a Si cap layer14including an emitter region. The C content is less than 0.8% in at least the emitter-side boundary portion of the second base region. This suppresses formation of recombination centers due to a high C content in a depletion layer at the emitter-base junction, and improves electric characteristics such as the gain thanks to reduction in recombination current, while low-voltage driving is maintained.
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Kubo Minoru
Ohnishi Teruhito
Takagi Takeshi
Toyoda Kenji
Yuki Koichiro
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Soward Ida M.
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