Method and device for programming an electrically...

Details Method and device for programming an electrically... Method and device for programming an electrically...

2006-06-27

2006-06-27

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S185220, C365S185290

Reexamination Certificate

active

07068540

ABSTRACT:
A device and method for programming an electrically programmable memory applies at least one first programming pulse to a group of memory cells (MC1–MCk) of the memory, accesses the memory cells of the group to ascertain a programming state thereof, and applies at least one second programming pulse to those memory cells in the group whose programming state is not ascertained to correspond to a desired programming state. A voltage applied to a control electrode of the memory cells is varied between the at least one first programming pulse and the at least one second programming pulse according to a forecasted change in biasing conditions of the memory cells in the group between said at least one first and at least one second programming pulses. Undesired over-programming of the memory cells is thus avoided.

REFERENCES:
patent: 6101125 (2000-08-01), Gorman
patent: 6426892 (2002-07-01), Shibata et al.
patent: 2004/0170062 (2004-09-01), Micheloni et al.

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