Sidewall structure and method of fabrication for reducing...

Details Sidewall structure and method of fabrication for reducing... Sidewall structure and method of fabrication for reducing...

2006-05-09

2006-05-09

Ha, Nguyen T. (Department: 2831)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C361S302000, C361S305000, C361S306100, C361S306300, C361S321100, C438S253000, C438S254000, C257S295000, C257S296000

Reexamination Certificate

active

07042705

ABSTRACT:
The present invention provides a sidewall oxygen diffusion barrier and a method for fabricating the sidewall oxygen diffusion barrier that reduces the diffusion of oxygen into contact plugs during a CW hole reactive ion etch of a ferroelectric capacitor of an FeRAM device. In one embodiment the sidewall barrier is formed from a substrate fence. In another embodiment, the sidewall barrier is formed by etching back an oxygen barrier.

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International Search Report, Mailing Date Dec. 7, 2004.

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