Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2006-02-21

2006-02-21

Menefee, James (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

Reexamination Certificate

active

07003009

ABSTRACT:
An edge-emitting type 650 nm band red semiconductor laser device is provided, which includes a resonator structure having an active layer on a semiconductor substrate. A low reflection three-layer film is provided on an emitting edge face of the resonator structure and a high reflection multi-layer film is provided on a rear edge face of the resonator structure. The low reflection three-layer film is formed by sequentially stacking a first Al203 film having a thickness of 10 nm, a SiN4 film having a thickness of 190 nm, and a second Al203 film having a thickness of 10 nm on the emitting edge face by a sputtering process.

REFERENCES:
patent: 6396864 (2002-05-01), O'Brien et al.
patent: 6438150 (2002-08-01), Yoo
patent: 06-224514 (1994-12-01), None
patent: 09-275239 (1997-10-01), None
patent: 09-326527 (1997-12-01), None

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