Resist stripping composition and method of producing...

Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...

Reexamination Certificate

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C510S176000, C134S001300

Reexamination Certificate

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07087563

ABSTRACT:
A resist stripping composition capable of reliably stripping off resist residue or polymer residue and keeping damage to the interconnects to a minimum and a method of producing a semiconductor device using the same, where the resist stripping composition comprises a salt of hydrofluoric acid and a base not including a metal, an organic solvent, a sugar alcohol such as xylitol, and water and has a hydrogen ion concentration of at least 8. The method of production of a semiconductor device comprises dry etching a metal layer or a semiconductor layer on a semiconductor substrate to form an interconnect layer having a predetermined pattern or forming an insulation layer on a semiconductor substrate formed with an interconnect layer and dry etching this to a predetermined pattern, then performing chemical treatment using a resist stripping composition comprising a salt of hydrofluoric acid and a base not including a metal, an organic solvent, a sugar alcohol such as xylitol, and water and having a hydrogen ion concentration of at least 8.

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patent: 5968848 (1999-10-01), Tanabe et al.
patent: 5972862 (1999-10-01), Torii et al.
patent: 6068000 (2000-05-01), Tanabe et al.
patent: 6372410 (2002-04-01), Ikemoto et al.
patent: 6500270 (2002-12-01), Nohara et al.
patent: 6638899 (2003-10-01), Wakiya et al.
patent: 2000-181083 (2000-06-01), None
patent: 2001-083713 (2001-03-01), None
patent: 2001-100436 (2001-04-01), None

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