Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2006-11-14
2006-11-14
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S085000, C117S086000, C117S092000, C117S093000
Reexamination Certificate
active
07135071
ABSTRACT:
A fractal structure is formed to have a plurality of regions different in fractal dimension characterizing the self-similarity. The fractal structure is grown from one or more origins under growth conditions providing a first fractal dimension in a first portion of the growth process from the start point of time to a first point of time, and under growth conditions providing a second fractal dimension lower than the first fractal dimension in another portion of the growth process from the first point of time to a second point of time. By adjusting the timing for changing the growth conditions, the fractal structure is controlled in nature of phase transition, such as critical temperature for ferromagnetic phase transition, which occurs in the fractal structure. For enhancing the controllability, the first fractal dimension is preferably larger than 2.7 and the second fractal dimension is preferably smaller than 2.3.
REFERENCES:
patent: 11195801 (1999-07-01), None
patent: 2001118379 (2001-04-01), None
H. Isshiki, K. Tanaka and T. Kimura, “Conduction subband formation in (GaSa)m(GaP)n FRACTAL structured atomic-layer-superlattice grown by atomic layer epitaxy”, Proc. of the 24thInternational Conference on The Physics of Semiconductors, CD-ROM File No. 0948, World Scientific Publishing Co. (1999).
R. Ugajin, “Composite nanomaterials based on fractal-shaped structures”, Physics Letters A, 227, (2000) pp. 267 to 272.
Kunemund Robert
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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