Semiconductor device, a manufacturing method thereof, and a...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

Reexamination Certificate

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C257S222000, C257S233000, C257S234000

Reexamination Certificate

active

07061030

ABSTRACT:
A semiconductor device includes a transfer channel for transferring charge generated by photoelectric conversion, an insulating film formed on the transfer channel, and a transfer electrode for applying a transfer voltage to the transfer channel via the insulating film. The insulating film has the first thickness and a second thickness that is thinner than the first thickness. The insulating film has the first thickness below both ends of the transfer electrode in a width direction of the transfer channel that is orthogonal to a charge transfer direction through the transfer channel, and the insulating film has the second thickness on a part including a center of the transfer channel in the width direction.

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patent: 6593175 (2003-07-01), Feudel et al.
patent: 5-206436 (1993-08-01), None
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patent: 5-343440 (1993-12-01), None
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patent: 6-151804 (1994-05-01), None

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