Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-08-08
2006-08-08
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185240, C365S185260
Reexamination Certificate
active
07088623
ABSTRACT:
The present invention provides a non-volatile memory cell structure suitable for the flash memory cell and EEPROM cell (electrically erasable programmable read only memory cell) to perform the byte programming and byte erasing operations. In the programming operation, a higher negative voltage applied to the drain region, such that the hot holes is generated to induce the hot electrons into the floating gate through the tunneling oxide layer in the lateral electrical field. In addition, the gate voltage is around the threshold voltage, which dependent on the integration circuit device design. Furthermore, the non-volatile memory cell utilized the channel Fowler-Nordheim tunneling for erasing operation. In order to perform the byte erasing operation, the drain junction used as an inhibition switch. Thus, the unselected cell in the same word line is inhibited by biasing the drain to ground. Therefore, the word lines of unselected cells are grounded.
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Arent Fox PLLC.
Hoang Huan
United Microelectronics Corp.
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