Silane composition, silicon film forming method and solar...

Compositions – Compositions containing a single chemical reactant or plural... – Organic reactant

Reexamination Certificate

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C252S183110, C252S183140, C106S287140, C106S287130, C106S287100, C136S261000, C136S258000

Reexamination Certificate

active

07067069

ABSTRACT:
A silane composition for preparing a semiconductor thin films of a solar cell is disclosed. The silane composition contains a polysilane compound represented by the formula SinRm(n is an integer of 3 or more, m is an integer of n to (2n+2) and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m=2n, n is an integer of 7 or more), and at least one silane compound selected from cyclopentasilane, cyclohexasilane and silylcyclopentasilane.

REFERENCES:
patent: 4683146 (1987-07-01), Hirai et al.
patent: 6086945 (2000-07-01), Kamata et al.
patent: 6503570 (2003-01-01), Matsuki et al.
patent: 6518087 (2003-02-01), Furusawa et al.
patent: 6541354 (2003-04-01), Shimoda et al.
patent: 6846513 (2005-01-01), Furusawa et al.
patent: 2005/0145163 (2005-07-01), Matsuki et al.
patent: 1 085 560 (2001-03-01), None
patent: 1 085 579 (2001-03-01), None
patent: 1 087 433 (2001-03-01), None
patent: 1085560 (2001-03-01), None
patent: 1085578 (2001-03-01), None
patent: 1 092 755 (2001-04-01), None
patent: 1113502 (2001-07-01), None
patent: 2 077 710 (1981-12-01), None
patent: 4-334551 (1992-11-01), None
patent: 7-267621 (1995-10-01), None
patent: 64-29661 (1998-01-01), None
patent: 11-49507 (1999-02-01), None
patent: 2004-186320 (2004-07-01), None
W. Kern, et al., J. Vac. Sci. Technol., vol. 14, No. 5, pp. 1082-1099, “Advances in Deposition Processes for Passivation Films,” Sep./Oct. 1977.
W.E. Spear, et al., Solid State Communications, vol. 17, pp. 1193-1196, “Substitutional Doping of Amorphous Silicon,” 1975.
P.A. Bianconi, et al., J. American Chemical Society, vol. 110, pp. 2342-2344, “Poly (N-Hexylsilyne): Synthesis and Properties of the First Alkyl Silicon [RSj]nNetwork Polymer,” 1988.
K. Furukawa, et al., Macromolecules, vol. 23, pp. 3423-3426, “Optical Properties of Silicon Network Polymers,” 1990.
K. Mikami, et al., J. Chem Soc., Chem, Commun., pp. 1161-1163, “Anomalous Threo-Diastereoselectivity in Allylic Silane-or Stannane-Aldehyde Condensation Reasctions: New Interpretation of the Antiperiplanar vs. Synclinal Problem on the Transition-State Conformations,” 1990.
T. Shono, et al., J. Chem. Soc., Chem. Commun., pp. 896-897, “Electroreductive Synthesis of Polygermane and Germane-Silane Copolymer,” 1992.
K. Sakamoto, et al., Macromolecules, vol. 23, No. 20, pp. 4494-4496, “Highly Ordered High Molecular Weight Alternating Polysilylene Copolymer Prepared by Anionic Polymerization of Masked Disilene1,” 1990.
E. Hengge, et al., Z. Anorg. Allg. Chem., Vol. 459, pp. 123-130, “Darstelleng Und Charakterisierung Von Cyclohexasilan Si5H12” 1979.
E. Hengge et al.; Monatshefte fur Chemle, vol. 106, pp. 503-512; “Darstellung und Eigenschaften von Cyclopentasilan”; 1975.

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