Integrated circuit package substrate having a thin film...

Details Integrated circuit package substrate having a thin film... Integrated circuit package substrate having a thin film...

2006-11-07

2006-11-07

Lee, Eddie C. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257S700000, C257S678000, C257S691000, C257S724000, C257S777000

Reexamination Certificate

active

07132743

ABSTRACT:
This invention relates to the manufacture of a substrate, such as a package substrate or an interposer substrate, of an integrated circuit package. A base structure is formed from a green material having a plurality of via openings therein. The green material is then sintered so that the green material becomes a sintered ceramic material and the base structure becomes a sintered ceramic base structure having the via openings. A conductive via is formed in each via opening of the sintered ceramic base structure. A capacitor structure is formed on the sintered ceramic base structure. The power and ground planes of the capacitor structure are connected to the vias. As such, a capacitor structure can be formed and connected to the vias without the need to drill vias openings in brittle substrates such as silicon substrates. The sintered ceramic material also has a low coefficient of thermal expansion and can resist high temperature processing conditions when manufacturing the capacitor structure, and is inexpensive to manufacture.

REFERENCES:
patent: 6072690 (2000-06-01), Farooq et al.
patent: 6970362 (2005-11-01), Chakravorty
patent: 0 359 513 (1990-03-01), None
patent: 359513 (1990-03-01), None
patent: 0 526 707 (1993-02-01), None
patent: WO 02/11206 (2002-02-01), None
PCT International Search Report, International Application No. PCT/US2004/042753, filing date Dec. 17, 2004, mailed on Jul. 4, 2005 (6 pages).

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