Solid state imaging device, method for driving the same and...

Details Solid state imaging device, method for driving the same and... Solid state imaging device, method for driving the same and...

2006-05-02

2006-05-02

Vu, Ngoc-Yen (Department: 2612)

Television

Camera, system and detail

Solid-state image sensor

C348S322000

Reexamination Certificate

active

07038723

ABSTRACT:
In making solid state imaging devices smaller and increasing their number of pixels, it is desirable to increase the charge amount that can be handled per unit area of the transfer portions. It is possible to achieve this by making the insulating film thinner, but this leads to electric fields in the semiconductor substrate that are too strong, and causes problems such as the generation of noise and the deterioration of the transfer efficiency. This invention relaxes potential steps in the transfer region by applying, when a signal charge1is being read out (t=t2), a high voltage to the electrode43for reading out the signal charge, a low voltage to at least one of the electrodes41, 45–47for preventing unnecessary mixing of signal charges, and an intermediate voltage between the high voltage and the low voltage to the electrodes42and44, which are adjacent to the electrode43to which the high voltage is applied.

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