Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2006-05-02

2006-05-02

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S079000, C257S080000, C257S081000

Reexamination Certificate

active

07038243

ABSTRACT:
A semiconductor light emitting device includes a hetero-configuration having an active layer, a first clad layer, and a second clad layer, the active layer being interposed between the clad layers. The active layer emits light when charge carriers are injected. The first and second clad layers keep the injected charge carriers in the active layer. The hetero-configuration is interposed between a first and a second electrode. The semiconductor light emitting device further includes a dense defect-injected layer. This layer is provided between the first electrode and the hetero-configuration. The dense defect layer is made of a material having a concentration of crystal defects, a value of a lattice constant and a thickness which together help prevent at least some remotely generated crystal defects from reaching the layers of the hetero-configuration.

REFERENCES:
patent: 4984242 (1991-01-01), Scifres et al.
patent: 5019874 (1991-05-01), Inoue et al.
patent: 5153889 (1992-10-01), Sugawara et al.

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