Method of fabricating a thin film transistor

Details Method of fabricating a thin film transistor Method of fabricating a thin film transistor

1987-04-28

1988-11-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 84, 437101, 437197, 437914, 437915, 437944, 148DIG1, 148DIG100, 148DIG150, 357 4, 357 237, H01L 700

Patent

active

047881577

ABSTRACT:
A method for fabricating a thin-film transistor having a stagger structure, in which the inner portion of the amorphous silicon layer doped as an ohmic contact layer to source and drain areas is defined by an insulating layer interposed therebetween, a step for forming source and drain electrodes on said amorphous silicon layer, which comprises a film forming process for forming a metal layer; a thermal treatment process for heating so as to generate a surface reaction between said metal layer and said amorphous silicon layer in order to selectively form a reaction layer only on said amorphous silicon layer; and a patterning process for selectively removing said metal layer so as to form source and drain electrodes.

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