Semiconductor laser element and optical data recording device

Details Semiconductor laser element and optical data recording device Semiconductor laser element and optical data recording device

Filed on

2006-11-28

Date issued

2006-11-28

Examiner

Harvey, Minsun Oh (Department: 2828)

Patent Class

Coherent light generators

SubClass

Particular active media

SubSubClass

Semiconductor

Other Related Categories

C372S045010, C372S046010

Type

Reexamination Certificate

Status

active

Patent number

07142575

Description

ABSTRACT:
A semiconductor laser element has the following structure. In the clad layer, a difference in a light radiation loss between the basic horizontal-lateral mode and the 1st-order horizontal-lateral mode is 10 cm−1or more. The refractive index of the clad layer is below an effective index against light in the basic horizontal-lateral mode, and the refractive index of the clad layer is equal to or more than an effective index against light in the 1st-order horizontal-lateral mode. The upper clad layer is provided only above a portion of the active layer, and thus is at least included in the ridge-stripe structure. This structure inhibits the I-L characteristic from suffering kink and realizes oscillations in the basic horizontal-lateral mode until output power reaches as high as 60–100 mW, in a peak output power of the semiconductor laser element at the time of a pulse current operation. This structure also enables the FFP to have an ellipticity of close to 1, thus making the spot of the semiconductor laser element close to a circular shape.

REFERENCES:
patent: 5974068 (1999-10-01), Adachi et al.
patent: 2004/0047381 (2004-03-01), Tojo et al.
Nagahama, S-i., et al., (2000). “High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates,”Jpn. J. Appl. Phys.39:L647-L650.
Tojyo, T. et al. (2002). “High-Power AlGaInN Laser Diodes with High Kink Level and Low Relative Intensity Noise,”Jpn. J. Appl. Phys.41:1829-1833.

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