Method of fabricating a bottle trench and a bottle trench...

Semiconductor device manufacturing: process – Making passive device – Trench capacitor

Reexamination Certificate

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Details

C438S242000, C438S243000, C438S244000, C438S245000, C438S246000, C438S248000, C438S259000, C438S387000, C438S388000, C438S389000, C438S391000, C438S678000

Reexamination Certificate

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07122439

ABSTRACT:
A method of fabricating a bottle trench and a bottle trench capacitor. The method including: providing a substrate; forming a trench in the substrate, the trench having sidewalls and a bottom, the trench having an upper region adjacent to a top surface of the substrate and a lower region adjacent to the bottom of the trench; forming an oxidized layer of the substrate in the bottom region of the trench; and removing the oxidized layer of the substrate from the bottom region of the trench, a cross-sectional area of the lower region of the trench greater than a cross-sectional area of the upper region of the trench.

REFERENCES:
patent: 5658816 (1997-08-01), Rajeevakumar
patent: 2003/0036241 (2003-02-01), Tews

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